Contact structure and forming method thereof

• Main Authors: LIU HUICHAO, CHEN JINXING, FAN GUANGLONG, XU WEI, WANG QINGQING
• Format: Patent
• Language: Chinese; English
• Published: 23.07.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Aspects of the disclosure provide a semiconductor device. The semiconductor device may include a trench formed in a first dielectric layer; a trench filler layer filling a portion of the trench; a conductive layer over the trench filler layer; and a second dielectric layer over the conductive layer. The second dielectric layer is disposed in the trench. The semiconductor device may also include a contact structure configured to be connected to the conductive layer through a hole in the second dielectric layer. 本公开的方面提供了一种半导体器件。该半导体器件可以包括：形成在第一电介质层中的沟槽；填充沟槽的一部分的沟槽填充物层；在沟槽填充物层之上的导电层；以及在导电层之上的第二电介质层。第二电介质层设置在沟槽中。半导体器件还可以包括被配置为通过第二电介质层中的孔连接到导电层的接触结构。