TAPERED VIA STRUCTURE IN MTJ DEVICES

A bottom electrode structure for MRAM or MTJ-based memory cells comprises a taper so that the bottom CD is smaller than the top CD. A process of making a bottom electrode contact structure comprises etching a dielectric layer by using a plasma chemistry with an increased degree of polymerization. A...

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Bibliographic Details
Main Authors HASHEMI POUYA, MARCHACK NATHAN, DORIS BRUCE
Format Patent
LanguageChinese
English
Published 23.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A bottom electrode structure for MRAM or MTJ-based memory cells comprises a taper so that the bottom CD is smaller than the top CD. A process of making a bottom electrode contact structure comprises etching a dielectric layer by using a plasma chemistry with an increased degree of polymerization. A product made by the process is obtained. 用于MRAM或基于MTJ的存储器单元的底部电极结构包括锥形，使得底部CD小于顶部CD。制造底部电极接触结构的工艺包括使用具有增加的聚合度的等离子体化学物质来蚀刻电介质层。获得了通过该工艺制成的产品。
Bibliography:Application Number: CN201980081245