DIRECT BONDED COPPER SUBSTRATES FABRICATED USING SILVER SINTERING

• Main Authors: KRISHNAN SHUTESH, TOLENTINO ERIK NINO MARCADO, CARNEY FRANCIS J
• Format: Patent
• Language: Chinese; English
• Published: 20.07.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to direct bonded copper substrates fabricated using silver sintering. The present invention discloses a direct bonded copper (DBC) substrate. The DBC substrate comprises: a ceramic sheet; a first lead frame disposed on a first side of the ceramic wafer; a second lead frame disposed on a second side of the ceramic wafer; and a sintered bonding portion between the first lead frame and the ceramic sheet. The ceramic chip is at least one of an aluminum oxide chip, an aluminum nitride chip, a silicon nitride chip or a boron nitride chip. A surface of the ceramic wafer is metalized, and the first lead frame is disposed on the metalized surface of the ceramic wafer. The first lead frame is a conductive metal trace, and the second lead frame is one of a conductive metal trace, a solid metal sheet, a metal foil, or a conductive sheet made of boron nitride, graphite, or carbon. 本发明题为"使用银烧结制造的直接接合铜衬底"。本发明公开了一种直接接合铜(DBC)衬底，该DBC衬底包括：陶瓷片；第一引线框，该第一引线框设置在陶瓷片的第一侧上；第二引线框，该第二引线框设置在陶瓷片的第二侧上；和烧结接合部，该烧结接合部位于第