Composite photoresist for preparing multi-material three-dimensional micro-nano structure and application of composite photoresist

• Main Authors: WANG YINGCHEN, JIAO BINZHANG, XIONG WEI, YU KEWANG, FAN XUHAO, XU YINUO, GAO HUI, LIU YUNCHENG, DENG LEIMIN
• Format: Patent
• Language: Chinese; English
• Published: 02.07.2021
• Subjects: ADDITIVE MANUFACTURING TECHNOLOGY; ADDITIVE MANUFACTURING, i.e. MANUFACTURING OFTHREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVEAGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING,STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING; APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR; SHAPING OR JOINING OF PLASTICS; TRANSPORTING; WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL

The invention belongs to the technical field of laser direct writing, and particularly relates to a composite photoresist for preparing a multi-material three-dimensional micro-nano structure and application of the composite photoresist. The method comprises the following steps: uniformly mixing a free radical monomer, a free radical photoinitiator, a free radical crosslinking agent, a cationic monomer and a cationic photoinitiator to obtain a composite photoresist, focusing femtosecond laser in the composite photoresist, and controlling the wavelength, power and processing speed of the femtosecond laser to respectively polymerize and crosslink a free radical system and a cationic system. Therefore, three-dimensional micro-nano structures of different materials are formed. According to the method disclosed by the invention, multi-component high-precision material integration can be realized in the same micro-nano structure only by using one photoresist precursor, and the operation steps are simple only throug