FILM STACK OVERLAY IMPROVEMENT FOR 3D NAND APPLICATION

• Main Authors: JORAPUR NIKHIL SUDHINDRARAO, BENJAMIN RAJ DAEMIAN RAJ, ADDEPALLI SAI SUSMITA, ROCHA-ALVAREZ JUAN CARLOS, CHICHKANOFF GREGORY EUGENE, OGATA MASAKI, ENSLOW KRISTOPHER, IBRAHIMI ZAKARIA, SRIVASTAVA SHAILENDRA, PADHI DEENESH, BAEK JONG-HOON, GUNG TZA-JING, HAN XINHAI, WANG WENJIAO
• Format: Patent
• Language: Chinese; English
• Published: 29.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate. 本公开的实施例描述一种用于沉积膜层的设备和方法，该设备和方法可在一系列沉积和光刻工艺之后对覆盖误差具有最小的贡献。在一个示例中，一种方法包括：将基板定位在处理腔室中的基板支撑件上；以及使包括含硅气体和反应气体的沉积气体混合物通过喷淋头流到处理腔室，根据基板