METHOD AND STRUCTURE TO IMPROVE IMAGE SENSOR CROSSTALK

• Main Authors: PHAN BILL, LIU YUANLIANG, BONAKDAR ALIREZA, MAO DULI
• Format: Patent
• Language: Chinese; English
• Published: 29.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a method and a structure to improve image sensor crosstalk. Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein. A plurality of pixel isolators is formed in the substrate material, each pixel isolator being disposed between one of the SPDs and one of the LPDs. A passivation layer is disposed on the substrate material and a buffer layer is disposed on the passivation layer. A plurality of first metal elements is disposed in the buffer layer, each first metal element being disposed over one of the pixel isolators, and a plurality of second metal elements is disposed over the plurality of first metal elements. 本申请涉及用于改善图像传感器串扰的方法和结构。图像传感器包含衬底材料，所述衬底材料具有设置在其中的多个小光电二极管SPD和多个大光电二极管LPD。在所述衬底材料中形成多个像素隔离器，每个像素隔离器设置在所述SPD中的一个与所述LPD中的一个之间。钝化层设置在所述衬底材料上，并且缓冲层设置在所述钝化层上。多个第一金属元件设置在所述缓冲层中，每个第一金属元件设置在所述像素隔离器中的一个的上方，并且多个第二金属元件设置在所述多个第一金属元件上方。