Semiconductor structure and forming method thereof

• Main Authors: HOU SHANGYONG, CHEN WEIMING, DING GUOQIANG
• Format: Patent
• Language: Chinese; English
• Published: 29.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming a semiconductor structure includes bonding a first die and a second die to a first side of a first interposer and a first side of a second interposer, respectively, wherein the first interposer is laterally adjacent to the second interposer; sealing the first interposer and the second interposer with a first molding material; forming a first recess in a second side of the first interposer opposite the first side of the first interposer; forming a second recess in a second side of the second interposer opposite the first side of the second interposer; and filling the first recess and the second recess with a first dielectric material. The embodiment of the invention also relates to a semiconductor structure. 一种形成半导体结构的方法包括将第一管芯和第二管芯分别接合至第一中介层的第一侧和第二中介层的第一侧，其中第一中介层横向邻近第二中介层；用第一模制材料密封第一中介层和第二中介层；在与第一中介层的第一侧相对的第一中介层的第二侧中形成第一凹槽；在与第二中介层的第一侧相对的第二中介层的第二侧中形成第二凹槽；以及用第一介电材料填充第一凹槽和第二凹槽。本发明的实施例还涉及半导体结构。