Silicon carbide diffusion welding method and silicon carbide heat exchanger

The invention relates to the technical field of silicon carbide material connection, in particular to a silicon carbide diffusion welding method and a silicon carbide heat exchanger. The silicon carbide diffusion welding method comprises the steps that, silicon carbide parts are cleaned, and at leas...

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Main Authors DING XU, YANG CHAO, FU MINXIANG, REN LAICHAO, JIANG WEIBO, FENG FUTAO, YU XIUYING, SHI JINGZHEN, JIANG JIAN'AN, YANG DAIKUN
Format Patent
LanguageChinese
English
Published 29.06.2021
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Summary:The invention relates to the technical field of silicon carbide material connection, in particular to a silicon carbide diffusion welding method and a silicon carbide heat exchanger. The silicon carbide diffusion welding method comprises the steps that, silicon carbide parts are cleaned, and at least two silicon carbide parts are stacked according to the structure of a to-be-formed product and placed in a diffusion welding furnace; the diffusion welding furnace is vacuumized till the air pressure in the furnace is not larger than 10 <-2 > Pa or the diffusion welding furnace is filled with protective gas till the air pressure in the furnace ranges from 0.2 Mpa to 0.5 Mpa; the temperature in the diffusion welding furnace is increased till the temperature in the furnace is 2000-2400 DEG C, the pressure intensity of 20-25 Mpa is applied to the silicon carbide parts, and the constant temperature and the constant pressure are kept for at least 50 min; and the diffusion welding furnace is cooled to be not higher tha
Bibliography:Application Number: CN202110273937