SEMICONDUCTOR DEVICE
A semiconductor device (1) is provided with: a semiconductor layer (40) having main surfaces (40a, 40b); a metal layer (31) having main surfaces (31a, 31b), the main surface (31a) being in contact with the main surface (40b), being thicker than the semiconductor layer (40), and comprising a first me...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
25.06.2021
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Subjects | |
Online Access | Get full text |
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Abstract | A semiconductor device (1) is provided with: a semiconductor layer (40) having main surfaces (40a, 40b); a metal layer (31) having main surfaces (31a, 31b), the main surface (31a) being in contact with the main surface (40b), being thicker than the semiconductor layer (40), and comprising a first metal material; a metal layer (30) having main surfaces (30a, 30b), the main surface (30a) being in contact with the main surface (31b) and comprising a metal material having a higher Young's modulus than the first metal material; and transistors (10, 20); the transistor (10) has a source electrode (11) and a gate electrode (19) on the main surface (40a) side of a semiconductor layer (40). The transistor (20) has a source electrode (21) and a gate electrode (29) on the main surface (40a) side of the semiconductor layer (40), and a bidirectional path from the source electrode (11) to the source electrode (21) via the metal layer (31) is used as a main current path.
半导体装置(1)具有:半导体层(40),具有主面(40a及40b);金属层(31),具有主面(31a及31 |
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AbstractList | A semiconductor device (1) is provided with: a semiconductor layer (40) having main surfaces (40a, 40b); a metal layer (31) having main surfaces (31a, 31b), the main surface (31a) being in contact with the main surface (40b), being thicker than the semiconductor layer (40), and comprising a first metal material; a metal layer (30) having main surfaces (30a, 30b), the main surface (30a) being in contact with the main surface (31b) and comprising a metal material having a higher Young's modulus than the first metal material; and transistors (10, 20); the transistor (10) has a source electrode (11) and a gate electrode (19) on the main surface (40a) side of a semiconductor layer (40). The transistor (20) has a source electrode (21) and a gate electrode (29) on the main surface (40a) side of the semiconductor layer (40), and a bidirectional path from the source electrode (11) to the source electrode (21) via the metal layer (31) is used as a main current path.
半导体装置(1)具有:半导体层(40),具有主面(40a及40b);金属层(31),具有主面(31a及31 |
Author | MIZUHARA HIDEKI FUJIOKA CHIE YOSHIDA HIROSHI SAKAMOTO MITSUAKI MATSUSHIMA YOSHIHIRO HAMASAKI MASAO |
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Snippet | A semiconductor device (1) is provided with: a semiconductor layer (40) having main surfaces (40a, 40b); a metal layer (31) having main surfaces (31a, 31b),... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SEMICONDUCTOR DEVICE |
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