SEMICONDUCTOR DEVICE

• Main Authors: FUJIOKA CHIE, MIZUHARA HIDEKI, HAMASAKI MASAO, SAKAMOTO MITSUAKI, MATSUSHIMA YOSHIHIRO, YOSHIDA HIROSHI
• Format: Patent
• Language: Chinese; English
• Published: 25.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device (1) is provided with: a semiconductor layer (40) having main surfaces (40a, 40b); a metal layer (31) having main surfaces (31a, 31b), the main surface (31a) being in contact with the main surface (40b), being thicker than the semiconductor layer (40), and comprising a first metal material; a metal layer (30) having main surfaces (30a, 30b), the main surface (30a) being in contact with the main surface (31b) and comprising a metal material having a higher Young's modulus than the first metal material; and transistors (10, 20); the transistor (10) has a source electrode (11) and a gate electrode (19) on the main surface (40a) side of a semiconductor layer (40). The transistor (20) has a source electrode (21) and a gate electrode (29) on the main surface (40a) side of the semiconductor layer (40), and a bidirectional path from the source electrode (11) to the source electrode (21) via the metal layer (31) is used as a main current path. 半导体装置(1)具有：半导体层(40)，具有主面(40a及40b)；金属层(31)，具有主面(31a及31