DEPOSITION PROCESS FOR FORMING SEMICONDUCTOR DEVICE AND SYSTEM

• Main Authors: KE ZHONGTING, XU ZHI'AN
• Format: Patent
• Language: Chinese; English
• Published: 25.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a deposition process for forming semiconductor devices and systems. A method includes placing a semiconductor substrate in a deposition chamber, wherein the semiconductor substrate includes a trench, and performing an atomic layer deposition (ALD) process to deposit a dielectric material within the trench, including flowing a first precursor of the dielectric material into the deposition chamber as a gas phase; flowing a second precursor of the dielectric material into the deposition chamber as a gas phase; and controlling the pressure and temperature within the deposition chamber such that the second precursor condenses on surfaces within the trench as a liquid phase of the second precursor, wherein the liquid phase of the second precursor has capillarity. 本公开涉及用于形成半导体器件和系统的沉积工艺。一种方法包括：将半导体衬底置于沉积室中，其中，半导体衬底包括沟槽；以及执行原子层沉积(ALD)工艺以在沟槽内沉积电介质材料，包括：使电介质材料的第一前体作为气相流入沉积室；使电介质材料的第二前体作为气相流入沉积室；以及控制沉积室内的压力和温度，使得第二前体作为第二前体的液相凝聚在沟槽内的表面上，其中，第二前体的液相具有毛细现象。