High-sensitivity magnetic field sensor based on CAVET-like transistor structure

• Main Authors: TAO ZHIKUO, ZHU RANRAN, XU LILEI, ZHOU JIAWEI
• Format: Patent
• Language: Chinese; English
• Published: 25.06.2021
• Subjects: MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; TESTING

The invention provides a high-sensitivity magnetic field sensor based on a CAVET-like transistor structure. The high-sensitivity magnetic field sensor sequentially comprises a source electrode, a GaN layer and an AlGaN barrier layer from bottom to top, wherein a heterojunction interface between the GaN layer and the AlGaN barrier layer is provided with a 2DEG, the two ends of the AlGaN barrier layer are respectively provided with a drain electrode, the upper portion of the AlGaN barrier layer is provided with a grid electrode, the GaN layer sequentially comprises a source layer, an N-type GaN drift layer, a current blocking layer and a GaN epitaxial layer from bottom to top, and a perforated layer is arranged in the middle of the current blocking layer. By combining the advantages of a horizontal structure device and a vertical structure device, the relative sensitivity of the sensor can reach 237.04%/T (when the gate voltage is 0V and the drain voltage is 5V), and compared with a magnetic field sensor of the