Storage unit

• Main Authors: MENG HAO, CHI KEQUN
• Format: Patent
• Language: Chinese; English
• Published: 18.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a magnetic storage technology, and discloses a storage unit. The unit comprises a piezoelectric substrate plated with an electrode, a first magnet layer located on one side of the piezoelectric substrate and having a magnetic moment capable of freely overturning, a second magnet layer, an antiferromagnetic layer formed on the side, opposite to the non-magnetic layer, of the second magnet layer and used for pinning the magnetic moment direction of the second magnet layer, and a non-magnetic layer located between the first magnet layer and the second magnet layer, wherein the piezoelectric substrate is made of an insulating material which generates a strain under the action of a voltage, and the first magnet layer is used for receiving the strain to overturn the magnetic moment of the first magnet layer. According to the invention, an inverse magnetoelectric coupling effect can be transmitted to the first ferromagnetic layer through the stress generated by the piezoelectric substrate, t