Patterned composite substrate, preparation method and LED epitaxial wafer

• Main Authors: LU QIANJUN, KANG KAI, XIANG JIONG
• Format: Patent
• Language: Chinese; English
• Published: 18.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The embodiment of the invention discloses a patterned composite substrate, a preparation method and an LED epitaxial wafer. The patterned composite substrate comprises a patterned substrate; a patterned epitaxial buffer layer which covers the patterned substrate, wherein a plurality of first microstructures are formed on the side, away from the patterned substrate, of the patterned epitaxial buffer layer, each first microstructure comprises a first heterogeneous material structure, the first heterogeneous material structure is at least located at the top of the first microstructure. According to the embodiment of the invention, the problems of lattice mismatch, low external quantum efficiency and low luminance during the growth of the gallium nitride epitaxial layer on the patterned sapphire substrate are solved, the effects of enhancing the light extraction efficiency and improving the epitaxial growth quality are realized, and the external quantum efficiency of an LED is favorably improved. 本发明实施例公开了一种图形化复合