SEMICONDUCTOR DEVICE

• Main Authors: IO EIJI, KUBO SHUNJI, TAJIMA HIDEYUKI, IIDA TETSUYA, ANDO KOICHI
• Format: Patent
• Language: Chinese; English
• Published: 18.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed is a semiconductor device comprising a base member, a multilayer wiring layer, and a first resistive element. The multilayer wiring layer is formed on the base member. The first resistive element is formed in the multilayer wiring layer. The first resistive element includes a first conductive part, a second conductive part and a third conductive part. The second conductive part is formed over the first conductive part. The third conductive part electrically connects the first conductive part and the second conductive part with each other. A length of the third conductive part in a first direction along a surface of the base member is greater than a length of the third conductive part in a second direction along the surface of the base member and perpendicular to the first direction. 本公开涉及一种半导体器件。该半导体器件包括基座构件、多层布线层和第一电阻元件。多层布线层被形成在基座构件上。第一电阻元件被形成在多层布线层中。第一电阻元件包括第一导电部分、第二导电部分和第三导电部分。第二导电部分被形成在第一导电部分之上。第三导电部分将第一导电部分和第二导电部分彼此电连接。第三导电部分在沿基座构件的表面的第一方向上的长度，大于第三导电部分在沿基座构件的表面的第二方向上的长度，并且第二方向垂直于第一方向。