Group III nitride composite substrate with asymmetric periodic structure and processing method thereof

• Main Authors: WANG MENGXUAN, ZHAO JIANGUO, CAO XIZHE, SHI JIANGYI, YANG MINHUI, TIAN CHENGRUI, GU JUNZHE
• Format: Patent
• Language: Chinese; English
• Published: 18.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a group III nitride composite substrate with an asymmetric periodic structure and a processing method of the group III nitride composite substrate, the composite substrate defines two specific directions on a substrate with specific orientation, and patterns with different periods are prepared along different directions and are used for secondary epitaxy of non-polar and semi-polar group III nitride materials. By using the composite substrate, the problem that lattice mismatch anisotropy exists between the non-polar III-nitride and the semi-polar III-nitride and a traditional conventional substrate in a growth plane can be solved, so that the epitaxial growth quality of the non-polar III-nitride and the semi-polar III-nitride is improved, and the composite substrate is widely applied to non-polar III-nitride photoelectron and power electronic devices and the semi-polar III-nitride photoelectron and power electronic devices. 本发明公开了一种具有非对称周期结构的III族氮化物复合衬底及其加工方法，该复合衬底在特定取向的衬底上定义特定的两个方向，沿不