Process method for processing 12-inch polished silicon wafer

• Main Authors: CHEN HAIBIN, KU LIMING, SU BING, ZHU QINFA, YAN ZHIRUI
• Format: Patent
• Language: Chinese; English
• Published: 15.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a process method for processing a 12-inch polished silicon wafer. The process method comprises the following steps of: (1) carrying out NOTCH polishing and edge polishing on a 12-inch silicon wafer of which the two sides are polished, then putting the silicon wafer into a wafer box, and putting the wafer box into a normal-temperature water tank containing pure water; (2) putting the wafer box filled with the silicon wafer into a No.1 liquid for cleaning, and then putting the wafer box into a No.2 liquid for cleaning, the No.1 liquid comprising ammonia water, hydrogen peroxide and pure water according to a volume ratio of 1: 1: 5-1: 5: 10, and the No.2 liquid comprising hydrochloric acid, hydrogen peroxide and pure water according to a volume ratio of 1: 1: 5-1: 5: 10; and (3) putting the cleaned wafer box filled with the silicon wafer into a water tank filled with warm water, and then slowly lifting the wafer box upwards to achieve the purpose of drying. By adopting the process method