Artificial sensory neuron structure based on multi-side gate synaptic device and preparation method thereof

The invention discloses an artificial sensory neuron structure based on a multi-side grid synaptic device and a preparation method thereof. The artificial sensory neuron structure comprises at least two piezoelectric nano-generators used for external force induction and a synaptic device used for pr...

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Bibliographic Details
Main Authors ZENG MINGYUE, WAN QING
Format Patent
LanguageChinese
English
Published 11.06.2021
Subjects
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
PHYSICS
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Summary:The invention discloses an artificial sensory neuron structure based on a multi-side grid synaptic device and a preparation method thereof. The artificial sensory neuron structure comprises at least two piezoelectric nano-generators used for external force induction and a synaptic device used for processing at least two voltage input signals, wherein the synaptic device is an electric double-layer transistor; the double-electrode-layer transistor takes an electrolyte material as a gate medium, takes an oxide semiconductor as a channel layer, and is provided with at least two plane side gates; and each piezoelectric nano generator is electrically connected to one side grid of the electric double-layer transistor. According to the artificial sensory neuron structure, the planar multi-side grid structure and the double-electric-layer coupling characteristic of the double-electric-layer transistor are fully exerted, and two or more sensors can be connected to different side grids of one transistor at the same tim
Bibliography:Application Number: CN202110187124