Magnetic memory and preparation method thereof

The invention provides a magnetic memory and a preparation method thereof. The magnetic memory comprises at least one hybrid memory array, the hybrid memory array comprises an STT-MRAM array and an SOT-MRAM array which are adjacently arranged, the STT-MRAM array comprises STT-MRAM storage units arra...

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Bibliographic Details
Main Authors MENG HAO, CHI KEQUN
Format Patent
LanguageChinese
English
Published 08.06.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a magnetic memory and a preparation method thereof. The magnetic memory comprises at least one hybrid memory array, the hybrid memory array comprises an STT-MRAM array and an SOT-MRAM array which are adjacently arranged, the STT-MRAM array comprises STT-MRAM storage units arranged according to an array, the SOT-MRAM array comprises SOT-MRAM storage units arranged according to an array, and the STT-MRAM storage units and the SOT-MRAM storage units have the same laminated structure. The magnetic memory not only can meet long-time storage of a large amount of data, but also can meet frequent erasing and writing of the large amount of data. 本发明提供一种磁性存储器及其制备方法，所述磁性存储器包括至少一个混合存储阵列，所述混合存储阵列包括相邻设置的STT-MRAM阵列和SOT-MRAM阵列，其中，所述STT-MRAM阵列包括按阵列排布的STT-MRAM存储单元，所述SOT-MRAM阵列包括按阵列排布的SOT-MRAM存储单元，所述STT-MRAM存储单元与所述SOT-MRAM存储单元具有相同的层叠结构。本发明的磁性存储器既能满足大量数据长时间保存，同时还能满足大量数据的频繁擦写。
Bibliography:Application Number: CN201911237999