High-frequency circuit driving circuit of parallel MOSFETs

The invention discloses a high-frequency circuit driving circuit of parallel MOSFETs. The driving circuit comprises a driving signal generation module, a pulse isolation module and a pulse processing module. The output end of the driving signal generation module is connected with the input end of th...

Full description

Saved in:
Bibliographic Details
Main Authors LI YABIN, LI RUI, MA XIHAO, FENG HAILONG, PENG YONGLONG
Format Patent
LanguageChinese
English
Published 18.05.2021
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The invention discloses a high-frequency circuit driving circuit of parallel MOSFETs. The driving circuit comprises a driving signal generation module, a pulse isolation module and a pulse processing module. The output end of the driving signal generation module is connected with the input end of the pulse isolation module, and the driving signal generation module is used for generating two paths of high-frequency driving signals which are opposite in direction, equal in amplitude and provided with dead zones at the same time and outputting the two paths of high-frequency driving signals to the pulse isolation module; the output end of the pulse isolation module is connected with the input end of the pulse processing module, and the output end of the pulse processing module is connected with the grid electrodes of a plurality of MOSFETs which are connected in parallel. According to the invention, the pulse isolation module and the pulse processing module are adopted to drive the plurality of MOSFETs which are
Bibliography:Application Number: CN202110268673