VERTICAL-TYPE NONVOLATILE MEMORY DEVICE AND A METHOD OF FABRICATING THE SAME

• Main Authors: HAN JEE-HOON, KIM KYUNG-DONG, SON YOUNG-HWAN
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2021
• Subjects: ELECTRICITY

The invention discloses a vertical type non-volatile memory device and a method of manufacturing the same. A vertical-type nonvolatile memory device including: a substrate including a cell array area and an extension area, the extension area extending in a first direction from the cell array area and including contacts; a channel structure extending in a vertical direction from the substrate; a first stack structure including gate electrode layers and interlayer insulating layers alternately stacked along sidewalls of the channel structure; a plurality of division areas extending in the first direction and dividing the cell array area and the extension area in a second direction perpendicular to the first direction; in the extension area, two insulating layer dams are arranged between two division areas adjacent to each other; a second stack structure including sacrificial layers and interlayer insulating layers alternately stacked on the substrate between the two insulating layer dams; and an electrode pad c