PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

• Main Authors: KAMATA HIDEKI, SATO MIKIO, YAMAMOTO NOBUHIKO, IKEDA TARO
• Format: Patent
• Language: Chinese; English
• Published: 11.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

The invention provides a plasma processing apparatus and a plasma processing method which can freely perform plasma distribution control regardless of the arrangement of a plurality of antennas. The plasma processing apparatus includes: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas. 本发明提供与多个天线的配置无关地、能够自由地进行等离子体分布控制的等离子体处理装置和等离子体处理方法。等离子体处理装置包括：腔室，其具有对基片实施等离子体处理的处理空间和合成电磁波的合成空间；分隔处理空间和合成空间的电介质窗；天线单元，其具有对合成空间辐射电磁波的多个天线，并作为相控阵天线发挥作用；对天线单元