Manufacturing method of semiconductor structure, semiconductor structure, transistor and memory

• Main Author: MEI XIAOBO
• Format: Patent
• Language: Chinese; English
• Published: 11.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a manufacturing method of a semiconductor structure, the semiconductor structure, a transistor and a memory, and the manufacturing method of the semiconductor structure comprises the steps: providing a semiconductor substrate, and forming a gate region and a source-drain region on the semiconductor substrate; forming an insulating dielectric layer, wherein the insulating dielectric layer simultaneously covers the gate region and the source-drain region; patterning the insulating dielectric layer in the source-drain region to form a first contact hole exposing the source-drain region; forming a metal silicide at the bottom of the first contact hole; patterning the insulating dielectric layer in the gate region, and forming a second contact hole of which the orthographic projection is located in the gate region on the semiconductor substrate; and forming a filling layer in the first contact hole and the second contact hole. According to the manufacturing method provided by the invention,