Packaging method of high-power MOS tube

• Main Author: HUANG DALI
• Format: Patent
• Language: Chinese; English
• Published: 04.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a packaging method of a high-power MOS tube, which is characterized in that a heat dissipation layer is additionally arranged at the top of the MOS tube, so that the heat dissipation effect is improved; the heat dissipation layer is linked with a source electrode leading-out circuit, so that at least two layers of metal circuits are embedded in a plastic packaging layer to improve the current carrying capacity of an interconnection layer; a copper frame is directly welded on a MOS chip, so that the physical and chemical damage risk of a chip Pad in the packaging process is reduced, and the requirement on the chip mounting precision is reduced. 本发明涉及一种大功率MOS管的封装方法，在MOS管顶部增加了散热层，提高了散热效果；利用散热层与源极导出线路链接，使塑封层中埋置了至少两层金属线路来提高互连层的载电流能力；在MOS芯片上直接焊接铜框架来降低芯片Pad在封装过程中所受物理和化学伤害风险，并降低了贴片精度的要求。