PLASMA-SINGULATED, CONTAMINANT-REDUCED SEMICONDUCTOR DIE

• Main Authors: GRIVNA GORDON M, HONG JEONG-PYO, MD SUM MOHD AKBAR
• Format: Patent
• Language: Chinese; English
• Published: 23.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a plasma-singulated, contaminant-reduced semiconductor die. Described implementations include a contaminant-free plasma singulation process, in which residues of materials used during plasma singulation are fully removed from sidewalls of a resulting semiconductor die, without damaging the semiconductor die. From such a contaminant-free plasma singulation process, a semiconductor die may be manufactured. The semiconductor die may include a first plurality of sidewall recesses formed in a sidewall of a substrate of the semiconductor die between a first surface and a second surface of the substrate, each having at most a first depth, as well as a second plurality of sidewall recesses formed in the sidewall of the substrate and disposed between the first plurality of sidewall recesses and the second surface, each having at least a second depth that is greater than the first depth. 本发明题为"等离子体切单的、污染物减少的半导体管芯"。本发明公开了无污染物等离子体切单工艺，其中将在等离子体切单期间使用的材料的残余物从所得半导体管芯的侧壁完全去除，而不损坏该半导体管芯。通过此类无污染物等离子体切单工艺