Growth method of silicon nitride film and preparation method of thick-film silicon nitride waveguide device

• Main Authors: LI ZHIHUA, ZHANG PENG, TANG BO, XIE LING, LIU RUONAN, YANG YAN, LI BIN
• Format: Patent
• Language: Chinese; English
• Published: 20.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; WAVEGUIDES

The invention relates to a growth method of a silicon nitride film and a preparation method of a thick-film silicon nitride waveguide device. The growth method of the silicon nitride film comprises the following steps: growing an oxide layer on a semiconductor substrate; etching a plurality of deep grooves in the oxide layer, enabling the bottom of each deep groove to go deep into the semiconductor substrate, and enabling the plurality of deep grooves to intersect to divide the oxide layer into a plurality of regions; and then depositing multiple layers of silicon nitride films on the surface of the oxide layer for multiple times by utilizing an LPCVD (Low Pressure Chemical Vapor Deposition) method, stacking the multiple layers of silicon nitride films into a silicon nitride film with a preset thickness, and carrying out annealing treatment after each deposition except the last deposition in the multiple times of deposition. The preparation method of the silicon nitride waveguide device comprises the followin