DRY CLEANING METHOD FOR HIGH-SELECTIVE REMOVAL OF SILICON OXIDE

• Main Authors: PARK JAE-YANG, OH SANG-RYONG, LEE GIL-GWANG, LIM DOO-HO
• Format: Patent
• Language: Chinese; English
• Published: 13.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a dry cleaning method for high-selective removal of silicon oxide. The present invention comprises: a reaction step of supplying a substrate, which is placed inside a chamber and has silicon oxide and silicon nitride formed thereon, with a fluorine-containing gas and a hydrogen-containing gas, which react with the silicon oxide and the silicon nitride, thereby transforming at least portions of the silicon oxide and the silicon nitride into reaction layers containing ammonium hexafluorosilicate ((NH4)2SiF6); and an annealing step of removing the reaction layer formed in the silicon oxide and leaving the reaction layer formed in the silicon nitride through annealing, wherein the reaction step and the annealing step are repeatedly performed until the silicon oxide is completely removed. According to the present invention, during the cleaning of a substrate having silicon oxide and silicon nitride formed thereon, only the silicon oxide can be etched with high selectivity while unn