Manufacturing method of phase change memory

• Main Authors: GAO WANGRONG, LIU JUN, TIAN BAOYI
• Format: Patent
• Language: Chinese; English
• Published: 06.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a manufacturing method of a phase change memory. The manufacturing method comprises the following steps: providing a substrate comprising a device region and an alignment region, wherein an interconnection line and a first dielectric layer covering the interconnection line are...