Manufacturing method of phase change memory
The invention provides a manufacturing method of a phase change memory. The manufacturing method comprises the following steps: providing a substrate comprising a device region and an alignment region, wherein an interconnection line and a first dielectric layer covering the interconnection line are...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
06.04.2021
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Subjects | |
Online Access | Get full text |
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