Manufacturing method of phase change memory

• Main Authors: GAO WANGRONG, LIU JUN, TIAN BAOYI
• Format: Patent
• Language: Chinese; English
• Published: 06.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a manufacturing method of a phase change memory. The manufacturing method comprises the following steps: providing a substrate comprising a device region and an alignment region, wherein an interconnection line and a first dielectric layer covering the interconnection line are formed on the substrate, the interconnection line is used for connecting a peripheral circuit of the phase change memory with an address line connecting part, and the first dielectric layer comprises a first part located in the device region and a second part located in the alignment region; aligning to the position of a first interconnection line in the alignment area, and forming a first alignment groove in the second part, wherein the depth of the first alignment groove is smaller than that of the second part; forming a memory material layer covering the first dielectric layer, wherein a part of the memory material layer in the alignment region commonly covers the first alignment groove, and a first sub-groove