Manufacturing method of phase change memory
The invention provides a manufacturing method of a phase change memory. The manufacturing method comprises the following steps: providing a substrate comprising a device region and an alignment region, wherein an interconnection line and a first dielectric layer covering the interconnection line are...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
06.04.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a manufacturing method of a phase change memory. The manufacturing method comprises the following steps: providing a substrate comprising a device region and an alignment region, wherein an interconnection line and a first dielectric layer covering the interconnection line are formed on the substrate, the interconnection line is used for connecting a peripheral circuit of the phase change memory with an address line connecting part, and the first dielectric layer comprises a first part located in the device region and a second part located in the alignment region; aligning to the position of a first interconnection line in the alignment area, and forming a first alignment groove in the second part, wherein the depth of the first alignment groove is smaller than that of the second part; forming a memory material layer covering the first dielectric layer, wherein a part of the memory material layer in the alignment region commonly covers the first alignment groove, and a first sub-groove |
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Bibliography: | Application Number: CN202011501781 |