Temperature monitoring simulation method for each physical layer of IGBT device under different working conditions

The invention discloses a temperature monitoring simulation method for each physical layer of an IGBT device under different working conditions, and the method comprises the steps: building a 3D thermal simulation model of the IGBT device through three-dimensional cartographic software; importing th...

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Bibliographic Details
Main Authors LUO JIAN, PAN ZHENGWEI, LIU XUGUANG, DONG CHANGCHENG
Format Patent
LanguageChinese
English
Published 26.03.2021
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Summary:The invention discloses a temperature monitoring simulation method for each physical layer of an IGBT device under different working conditions, and the method comprises the steps: building a 3D thermal simulation model of the IGBT device through three-dimensional cartographic software; importing the 3D thermal simulation model into Icepak simulation software, and carrying out transient CFD simulation calculation on the 3D thermal simulation model; taking the CFD simulation calculation result as the input of Simplorer simulation software, and creating an order reduction model; establishing anIGBT dynamic packaging model by using a Simpler; establishing a single-phase PWM inverter circuit topology model in a Simpler based on the packaging model, and controlling the topology model through PWM to obtain voltage and current data of the IGBT device dynamic packaging model; and inputting the voltage and current data into a reduced-order model to obtain a curve that the junction temperatureof the IGBT and the diode
Bibliography:Application Number: CN202011530910