Preparation method of selective emitter, preparation method of battery and battery

• Main Authors: CUI YANFENG, ZHUANG YUFENG, YUAN SHENGZHAO, WAN YIMAO
• Format: Patent
• Language: Chinese; English
• Published: 16.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a preparation method of a selective emitter, a preparation method of a cell and the cell, and belongs to the technical field of solar cells. The preparation method of the selective emitter comprises the following steps: forming a dielectric mask on the surface of a textured silicon wafer in a non-grid line region, and forming a boron-doped amorphous silicon layer on the surface of the dielectric mask; forming a doped layer on the surface of the textured silicon wafer in the grid line region, wherein the doped layer contains boron-doped amorphous silicon and/or boron-doped crystalline silicon; taking the boron-doped amorphous silicon layer and the doping layer as doping sources, and diffusing boron in the doping sources into the silicon wafer in a high-temperature diffusion mode. The selective emitter is formed in a one-time boron diffusion mode, high-temperature links and process steps in the prior art are reduced, and the method is suitable for mass production. 一种选择性发射极的制备方法、电池的制备方法以及