Magnetic tunnel junction structure of magnetic random access memory

The invention provides a magnetic tunnel junction structure of a magnetic random access memory, which is characterized in that an amorphous buffer layer and a crystalline seed layer are arranged between an antiferromagnetic layer and a bottom electrode of the magnetic tunnel junction structure to gu...

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Bibliographic Details
Main Authors XIAO RONGFU, ZHANG YUNSEN, GUO YIMIN, CHEN JUN
Format Patent
LanguageChinese
English
Published 12.03.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a magnetic tunnel junction structure of a magnetic random access memory, which is characterized in that an amorphous buffer layer and a crystalline seed layer are arranged between an antiferromagnetic layer and a bottom electrode of the magnetic tunnel junction structure to guide the growth of the antiferromagnetic layer to form a face-centered cubic structure, so that the magnetism of a magnetic tunnel junction unit is facilitated, the electricity and the yield are improved; and the device is miniaturized. 本申请提供一种磁性随机存储器的磁性隧道结结构，所述磁性隧道结结构的反铁磁层与底电极之间设置非晶缓冲层与晶态种子层，引导所述反铁磁层的生长而形成面心立方结构，有利于磁性隧道结单元在磁学，电学和良率的提升以及器件的缩微化。
Bibliography:Application Number: CN201910859963