Memory element and manufacturing method thereof

• Main Authors: ZHUANG JIARONG, HUANG ZHAOYI, TIAN ZHONGXUN, HONG YONGWEN
• Format: Patent
• Language: Chinese; English
• Published: 12.03.2021
• Subjects: ELECTRICITY

The embodiment of the invention provides a memory element and a manufacturing method thereof. The memory element includes a word line, a bit line, an active region, and a bit line contact structure. The word line is arranged in the substrate and extends in a first direction. The bit line is arranged on the substrate and extends in the second direction. The active region is disposed in the substrate and extends in a third direction. The bit line contact structure is disposed between the active region and the bit line. The top view pattern of the bit line contact structure has a long axis. The included angle between the extending direction of the long shaft and the third direction is smaller than the included angle between the extending direction of the long shaft and the first direction andsmaller than the included angle between the extending direction of the long shaft and the second direction. 本发明实施方式提供一种存储器元件及其制造方法。存储器元件包括字线、位线、主动区域以及位线接触结构。字线设置于衬底中，且沿第一方向延伸。位线设置于衬底上，且沿第二方向延伸。主动区域设置于衬底中，且沿第三方向延伸。位线接触结构设置于主动