SEPARATION METHOD FOR SEPARATING A SEMICONDUCTOR WAFER COMPRISING A PLURALITY OF SOLAR CELL STACKS

A separation method for separating a wafer comprising a plurality of solar cell stacks along at least one parting line, at least having the steps of: providing the wafer with a top, a bottom, an adhesive layer which is integrally bonded with the top and a cover glass layer which is integrally bonded...

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Bibliographic Details
Main Authors SOMMER STEFFEN, FREY ANNIKA, KOSTLER WOLFGANG
Format Patent
LanguageChinese
English
Published 05.03.2021
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Summary:A separation method for separating a wafer comprising a plurality of solar cell stacks along at least one parting line, at least having the steps of: providing the wafer with a top, a bottom, an adhesive layer which is integrally bonded with the top and a cover glass layer which is integrally bonded with the adhesive layer, wherein the wafer includes a plurality of solar cell stacks, each having agermanium substrate layer forming the bottom of the wafer, a germanium sub-cell and at least two III-V sub-cells; creating a separating trench along the parting line by means of laser ablation, whichextends from a bottom of the wafer through the wafer and the adhesive layer at least up to a top of the cover glass layer; and dividing the cover glass layer along the separating trench. 一种用于沿着至少一个分离线对包括多个太阳能电池堆叠的半导体晶片进行分离的分离方法,该分离方法至少包括以下步骤:提供半导体晶片,该半导体晶片具有上侧、下侧、与上侧材料锁合地连接的粘合剂层和与粘合剂层材料锁合地连接的盖玻璃层,其中,具有多个太阳能电池堆叠的半导体晶片分别包括构成半导体晶片的下侧的锗衬底层、锗子电池和至少两个III-V族子电池,沿着分离线借助激光烧蚀产生分离沟道,该分离沟道从半导体晶片的下侧穿过半导体晶片和粘合剂层至少延伸至盖玻璃层的与粘合剂层邻接的下侧,以及沿
Bibliography:Application Number: CN202010881681