Semiconductor memory device

• Main Authors: YANG GUANG, TAN WENYI, LYU JIAWEI, YAN RONGJUN, WANG JIANZHI, YUAN LINSHAN
• Format: Patent
• Language: Chinese; English
• Published: 05.03.2021
• Subjects: ELECTRICITY

A semiconductor memory device includes a substrate, a floating gate, an interlayer dielectric layer, an interconnect structure, an etch stop layer, a conductive structure, and an opening. The floatinggate is disposed on the substrate. The interlayer dielectric layer is disposed on the floating gate. The interconnect structure is disposed in the interlayer dielectric layer. The etch stop layer isdisposed on the interlayer dielectric layer. The conductive structure penetrates through the etching stop layer and is electrically connected with the interconnection structure. The opening penetratesthrough the etching stop layer, and the opening and at least one part of the floating gate overlap in the thickness direction of the substrate. 本发明公开一种半导体存储装置，其包括基底、浮置栅极、层间介电层、互连结构、蚀刻停止层、导电结构以及开口。浮置栅极设置于基底上。层间介电层设置于浮置栅极上。互连结构设置于层间介电层中。蚀刻停止层设置于层间介电层上。导电结构贯穿蚀刻停止层且与互连结构电连接。开口贯穿蚀刻停止层，且开口与浮置栅极的至少一部分于基底的厚度方向上重叠。