GROWTH INHIBITOR FOR FORMING THIN FILM METHOD FOR FORMING THIN FILM AND SEMICONDUCTOR SUBSTRATE PREPARED THEREFROM

• Main Authors: KIM SO-JUNG, LEE SEOK-JONG, YEON CHANG-BONG, BYUN HYE-RAN, SONG TAE-HO, JUNG JAE-SUN
• Format: Patent
• Language: Chinese; English
• Published: 05.03.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film by using the same, and a semiconductor substrate prepared therefrom, and, more specifically, to a growth inhibitor for forming a thin film which is a compound represented by the following chemical formula 1, AnBmXo (where A is carbon or silicon, B is hydrogen or alkyl of 1 to 3 carbon atoms, X is halogen, and n is an integer of 1 to 15, o is an integer greater than or equal to 1, and m is 0 to 2n+1), a method for forming a thin film by using the same, and a semiconductor substrate prepared therefrom. 本发明涉及薄膜形成用生长抑制剂，利用该生长抑制剂的薄膜形成方法以及由此制造的半导体基板，更具体涉及作为由化学式1表示的化合物的薄膜形成用生长抑制剂，利用该生长抑制剂的薄膜形成方法以及由此制造的半导体基板。本发明通过抑制副反应，适当降低薄膜生长速率，并通过去除薄膜内工艺副产物，即便在具有复杂结构的基板上形成薄膜时，也能大幅提高阶梯覆盖率以及薄膜的厚度均匀性。化学式1：AnBmXo所述A为碳或硅，所述B为氢或碳原子数为1至3的烷基，所述X为卤素，所述n为1至15的整数，所述o为1以上的整数，m为0至2n+1。