Amorphous Layers for Reducing Copper Diffusion and Method Forming Same

• Main Authors: LIU DINGYI, XU KAIXIANG, WU JIAYU, LIN ZHINAN
• Format: Patent
• Language: Chinese; English
• Published: 02.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the n etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature. The embodiment of the invention also provides an integrated circuit structure. 形成集成电路结构的方法包括在第一导电部件上方沉积蚀刻停止层，实施第一处理以使蚀刻停止层非晶化，在蚀刻停止层上方沉积介电层，蚀刻介电层以形成开口，蚀刻穿过蚀刻停止层以将开口延伸至蚀刻停止层中，以及用导电材料填充开口以形成第二导电部件。本发明的实施例还提供了一种集成电路结构。