Amorphous Layers for Reducing Copper Diffusion and Method Forming Same
A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the n etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
02.03.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the n etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature. The embodiment of the invention also provides an integrated circuit structure.
形成集成电路结构的方法包括在第一导电部件上方沉积蚀刻停止层,实施第一处理以使蚀刻停止层非晶化,在蚀刻停止层上方沉积介电层,蚀刻介电层以形成开口,蚀刻穿过蚀刻停止层以将开口延伸至蚀刻停止层中,以及用导电材料填充开口以形成第二导电部件。本发明的实施例还提供了一种集成电路结构。 |
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Bibliography: | Application Number: CN202010873119 |