Low cross-axis crosstalk sensitive structure and manufacturing method thereof
The invention relates to a low-cross-axis crosstalk sensitive structure and a manufacturing method thereof, the low-cross-axis crosstalk sensitive structure is located right below a diffraction grating in an optical micro-accelerometer, and the sensitive structure comprises an inertial mass block, a...
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Format | Patent |
Language | Chinese English |
Published |
02.03.2021
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Abstract | The invention relates to a low-cross-axis crosstalk sensitive structure and a manufacturing method thereof, the low-cross-axis crosstalk sensitive structure is located right below a diffraction grating in an optical micro-accelerometer, and the sensitive structure comprises an inertial mass block, a silicon substrate, a cantilever beam and a glass substrate with a cavity; the low-cross-axis crosstalk sensitive structure comprises an inertial mass block, a silicon substrate, cantilever beams and a glass substrate with a cavity, wherein a cavity is longitudinally formed in the middle of the silicon substrate, and the inertia mass block is arranged in the cavity of the silicon substrate; the cantilever beams are of a snake-shaped zigzag structure, and the two ends of each cantilever beam areconnected with the inertia mass block and the inner wall of the silicon substrate cavity respectively; the outer edge of the glass substrate is fixedly connected with the outer edge of the silicon substrate, and the cavity of |
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AbstractList | The invention relates to a low-cross-axis crosstalk sensitive structure and a manufacturing method thereof, the low-cross-axis crosstalk sensitive structure is located right below a diffraction grating in an optical micro-accelerometer, and the sensitive structure comprises an inertial mass block, a silicon substrate, a cantilever beam and a glass substrate with a cavity; the low-cross-axis crosstalk sensitive structure comprises an inertial mass block, a silicon substrate, cantilever beams and a glass substrate with a cavity, wherein a cavity is longitudinally formed in the middle of the silicon substrate, and the inertia mass block is arranged in the cavity of the silicon substrate; the cantilever beams are of a snake-shaped zigzag structure, and the two ends of each cantilever beam areconnected with the inertia mass block and the inner wall of the silicon substrate cavity respectively; the outer edge of the glass substrate is fixedly connected with the outer edge of the silicon substrate, and the cavity of |
Author | GENG ANBING DONG TINGTING WANG CHENSHENG WANG JIANBO YAO YUAN |
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DocumentTitleAlternate | 一种低交叉轴串扰敏感结构及其制造方法 |
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RelatedCompanies | CENTRAL CHINA INSTITUTE OF OPTOELECTRONIC TECHNOLOGY (CHINA SHIPBUILDING INDUSTRY CORPORATION NO. 717 RESEARCH INSTITUTE) |
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Snippet | The invention relates to a low-cross-axis crosstalk sensitive structure and a manufacturing method thereof, the low-cross-axis crosstalk sensitive structure is... |
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SubjectTerms | INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK PHYSICS TESTING |
Title | Low cross-axis crosstalk sensitive structure and manufacturing method thereof |
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