Parent Substrate, Wafer Composite and Method of Manufacturing Crystalline Substrates and Semiconductor Devices

• Main Authors: RICHTER JOHANNES, SCHAGERL GUNTER, LACKNER GERALD, DIEWALD WOLFGANG, SWOBODA MARKO, RIESKE RALF, GOLLER BERNHARD, RUPP ROLAND, GRAF HEIMO, BINTER ALEXANDER
• Format: Patent
• Language: Chinese; English
• Published: 26.02.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a parent substrate, a wafer composite and a method of manufacturing a crystalline substrate and a semiconductor device. Provided is a parent substrate (100) that includes a central region (110) and an edge region (180). The edge region (180) surrounds the central region (110). A detachment layer (150) is formed in the central region (110). The detachment layer (150) extendsparallel to a main surface (101, 102) of the parent substrate (100). The detachment layer (150) includes modified substrate material. A groove (190) is formed in the edge region (180). The groove laterally encloses the central region (110). The groove (190) runs vertically and/or tilted to the detachment layer (150). 公开了母衬底、晶片复合体以及制造晶体衬底和半导体器件的方法。提供了包括中心区(110)和边缘区(180)的母衬底(100)。边缘区(180)围绕中心区(110)。在中心区(110)中形成脱附层(150)。脱附层(150)与母衬底(100)的主表面(101、102)平行地延伸。脱附层(150)包括改性的衬底材料。在边缘区(180)中形成凹槽(190)。凹槽(190)在横向上包围中心区(110)。凹槽(190)对于脱附层(150)竖向地和/或倾斜地行进。