Preparation method of light emitting diode based on carbon quantum dots
The invention relates to the field of display devices, and discloses a preparation method of a light emitting diode based on carbon quantum dots. The preparation method uses 3, 4-dihydroxybenzoic acidas a raw material, uses a hydrothermal method to prepare green fluorescent CQDs, uses the CQDs as an...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
05.02.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to the field of display devices, and discloses a preparation method of a light emitting diode based on carbon quantum dots. The preparation method uses 3, 4-dihydroxybenzoic acidas a raw material, uses a hydrothermal method to prepare green fluorescent CQDs, uses the CQDs as an object, uses aminopropyl polydimethylsiloxane as a subject, and uses a subject-object doping technology to prepare a light emitting layer and the QLED. Therefore, the dispersibility of the CQDs in the light emitting layer thin film is improved, the CQDs can be applied to QLEDs, and light emittingquenching of devices can be inhibited.
本发明涉及显示器件领域,公开了一种基于碳量子点的发光二极管的制备方法,本发明以3,4-二羟基苯甲酸为原料,采用水热法,制备绿色荧光CQDs,将CQDs作为客体,氨丙基聚二甲基硅氧烷作为主体,利用主客体掺杂技术制备发光层,制备QLED。使得发光层薄膜中CQDs的分散性得到提高可以应用于QLED,能够抑制器件的发光猝灭。 |
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Bibliography: | Application Number: CN202011267864 |