BONDED BODY AND ELASTIC WAVE ELEMENT

• Main Authors: UNO YUDAI, GOTO MASASHI, TAI TOMOYOSHI
• Format: Patent
• Language: Chinese; English
• Published: 26.01.2021
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS

To improve bonding strength between a support substrate and a piezoelectric single crystal substrate while using a high resistance bonding layer in a bonded body in which a support substrate comprising a single crystal silicon is bonded to a piezoelectric single crystal substrate. Bonded bodies 5, 5A include: piezoelectric single crystal substrates 4, 4A; a support substrate 1 comprising a singlecrystal silicon; a bonding layer 2A which is provided between the support substrate 1 and the piezoelectric single crystal substrates 4, 4A, and has a composition of Si(1-x)Ox(0.008<=x<=0.408); and anon-crystalline layer 8 which is provided between the support substrate 1 and the bonding layer 2A and comprises silicon atoms, oxygen atoms, and argon atoms. The concentration of the oxygen atoms inthe non-crystalline layer 8 at an end facing the bonding layer 2A is higher than the average concentration of the oxygen atoms in the bonding layer 2A. 将包含单晶硅的支撑基板接合于压电性单晶基板而得到的接合体中，使用高电阻接合层，且使支撑基板与压电性单晶基板之间的接合强度得到提高。接合体5、5A具备：