METHOD FOR FABRICATING BIT LINE CONTACT

• Main Author: KOBAYASHI NAOYOSHI
• Format: Patent
• Language: Chinese; English
• Published: 22.01.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed herein is a method that includes: forming a composite layer, the composite layer comprising first and second insulative materials and a first polysilicon layer that is between the first andsecond insulative materials, forming a hole in the composite layer, the hole penetrating through the composite layer to define respective edge portions of the first and second insulative materials andthe first polysilicon layer, and converting the edge portion of the first polysilicon layer into third insulative material so that the third insulative material is between the respective edges of thefirst and second insulative materials. 本文中公开一种方法，其包含：形成复合层，所述复合层包括第一绝缘材料及第二绝缘材料以及位于所述第一绝缘材料与所述第二绝缘材料之间的第一多晶硅层；在所述复合层中形成孔，所述孔穿透所述复合层以界定所述第一绝缘材料及所述第二绝缘材料以及所述第一多晶硅层的相应边缘部分；及将所述第一多晶硅层的所述边缘部分转化为第三绝缘材料，使得所述第三绝缘材料位于所述第一绝缘材料与所述第二绝缘材料的所述相应边缘之间。