Method of cleaning silicon-based device

• Main Authors: HUANG YUYANG, FEI XIAOBIN
• Format: Patent
• Language: Chinese; English
• Published: 22.01.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of cleaning a silicon-based device is disclosed. The method comprises the steps: providing corrosive liquid containing OH, enabling the corrosive liquid to make contact with the bottom of thesilicon-based device with dirt adsorbed in an electrostatic mode, and enabling OH in the corrosive liquid to react with silicon to generate hydrogen, wherein an upward acting force generated by the hydrogen can at least enable the dirt to overcome the acting force of electrostatic adsorption; so the dirt at the bottom of the silicon-based device is removed, thereby achieving the cleaning of the silicon-based device. According to the method for solving the electrostatic adsorption problem of the dirt at the bottom of the silicon-based V groove, the dirt generated by electrostatic adsorption isjacked up and suspended in a solution by utilizing hydrogen generated by reaction of silicon and hydroxyl ions in a corrosion form, so the dirt at the bottom of the V groove is removed, the wafer yield is greatly improved, an