Film growth system and method
The invention relates to a film growth system and method. The film growth system comprises an upper chamber, a heating device and a liftable sample table are arranged in the upper chamber, one side ofthe upper chamber is connected with a precursor injection device of an atomic layer deposition syste...
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Main Author | |
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Format | Patent |
Language | Chinese English |
Published |
19.01.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a film growth system and method. The film growth system comprises an upper chamber, a heating device and a liftable sample table are arranged in the upper chamber, one side ofthe upper chamber is connected with a precursor injection device of an atomic layer deposition system through an input pipeline, and the other side of the upper chamber is connected with a vacuumizing device through an output pipeline; and the lower portion of the upper chamber is connected with a lower chamber through a partition valve, one or more evaporation sources are installed in the lowerchamber, and the lower chamber is also connected with the vacuumizing device. The system and method have the advantages that the structure is reasonable and the operation is convenient, vacuum evaporation and atomic deposition are carried out in the same device, the technical scheme can be used for multiple purposes such as catalytic material preparation, semiconductor material preparation and solar photovoltaic devices, a |
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Bibliography: | Application Number: CN201910584024 |