SILICON CARBIDE EPITAXIAL GROWTH DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

• Main Authors: SAKAI MASA, KOBAYASHI KAZUO, HINO YASUNARI, KATSUKI SHINICHIRO
• Format: Patent
• Language: Chinese; English
• Published: 12.01.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Provided are a silicon carbide epitaxial growth device and a method for manufacturing a silicon carbide epitaxial wafer, whereby epitaxial growth can be performed on a silicon carbide substrate so asto achieve a uniform carrier concentration, and stable and good device characteristics can be obtained. A wafer holder (2) on which a silicon carbide substrate (1) and a tantalum carbide member (4) are mounted is mounted on a turntable (5) in a susceptor (6), is heated by an induction heating coil (7) around the susceptor (6), and is epitaxially grown on the silicon carbide substrate (1) so as tohave a uniform carrier concentration by supplying a growth gas, a dopant gas, and a carrier gas into the susceptor (6), so that the stable and good device characteristics can be obtained, and the yield of a silicon carbide epitaxial wafer process can be improved. 提供一种碳化硅外延生长装置以及碳化硅外延晶片的制造方法，其能够在碳化硅基板之上以成为均匀的载流子浓度的方式进行外延生长，得到稳定的良好的器件特性。将搭载了碳化硅基板(1)以及碳化钽部件(4)的晶片保持器(2)搭载于基座(6)内的旋转台(5)，通过基座(6)周围的感应加热线圈(7)进行加热，通过向基座(6)内供给生长气体、掺