Assembled crucible device for temperature control in silicon carbide single crystal growth process

• Main Authors: LI ZHONGHAI, XU ZHUYING, PEI YOUSONG
• Format: Patent
• Language: Chinese; English
• Published: 12.01.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses an assembled crucible device for temperature control in a silicon carbide single crystal growth process, which comprises the following steps of: when silicon carbide single crystals with the diameter of 2-8 inches grow, installing an internal support tube which plays a decisive role in the growth form of the single crystals on a crucible, in order to achieve free temperature gradient regulation and control of a single crystal growth part, a high-density sealing carbon ring with external temperature control is further designed and installed, and the crystal form and quality can be different through temperature gradient change of an internal supporting tube cavity. In other words, the temperature gradient used in the crystal growth process is low in manufacturing costand has an obvious effect, and therefore the possible crystal polymorphic phenomenon can be avoided according to thermal stress and temperature distribution control of silicon carbide single crystalgrowth. On the other hand,