Structure for optimizing writing performance of magnetic random access memory and preparation method thereof
The invention discloses a structure for optimizing the writing performance of a magnetic random access memory. The structure comprises a writing accelerator, the writing accelerator is positioned on the lower side of a bottom electrode of the magnetic random access memory and the upper side of a bot...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
05.01.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a structure for optimizing the writing performance of a magnetic random access memory. The structure comprises a writing accelerator, the writing accelerator is positioned on the lower side of a bottom electrode of the magnetic random access memory and the upper side of a bottom electrode through hole, and the writing accelerator is directly connected with the bottom electrode and the bottom electrode through hole. The invention further discloses a preparation method of the structure for optimizing the writing performance of the magnetic random access memory. The preparation method comprises the following steps: 1, providing a CMOS substrate with a polished surface and a metal connecting line Mx; 2, manufacturing a bottom electrode through hole in the flattened CMOSsubstrate, and grinding the bottom electrode through hole; 3, on the bottom electrode through hole, performing graphical definition and etching to manufacture writing accelerator metal, filling a writing accelerator dielectr |
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Bibliography: | Application Number: CN201910586552 |