Structure for optimizing writing performance of magnetic random access memory and preparation method thereof

• Main Authors: XIAO RONGFU, ZHANG YUNSEN, GUO YIMIN, CHEN JUN
• Format: Patent
• Language: Chinese; English
• Published: 05.01.2021
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention discloses a structure for optimizing the writing performance of a magnetic random access memory. The structure comprises a writing accelerator, the writing accelerator is positioned on the lower side of a bottom electrode of the magnetic random access memory and the upper side of a bottom electrode through hole, and the writing accelerator is directly connected with the bottom electrode and the bottom electrode through hole. The invention further discloses a preparation method of the structure for optimizing the writing performance of the magnetic random access memory. The preparation method comprises the following steps: 1, providing a CMOS substrate with a polished surface and a metal connecting line Mx; 2, manufacturing a bottom electrode through hole in the flattened CMOSsubstrate, and grinding the bottom electrode through hole; 3, on the bottom electrode through hole, performing graphical definition and etching to manufacture writing accelerator metal, filling a writing accelerator dielectr