Preparation method of isolated ZnO microrods

• Main Authors: XIAN FENGLIN, CAO ZHAOLOU, MENG YIJIN, KUANG WENJIAN, XU LINHUA, ZHENG GAIGE
• Format: Patent
• Language: Chinese; English
• Published: 01.01.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The preparation method of the isolated ZnO microrod comprises the following steps: cleaning a monocrystalline silicon substrate, blow-drying and then putting the monocrystalline silicon substrate intoa substrate tray; loading the substrate into a vacuum chamber, and vacuumizing a cavity of the vacuum chamber; Au and Ti target materials are pretreated; an Au/Ti thin film is deposited by adopting an electron beam deposition method, the temperature of the substrate is room temperature, the deposition voltage is 10KV, and the thicknesses of deposited Au and Ti are 50nm and 20nm respectively; thepreparation method comprises the following steps: growing ZnO microrods on a substrate by adopting a hydrothermal method, taking zinc nitrate and hexamethylenetetramine as precursors, taking deionizedwater as a solvent, and controlling the growth temperature to be 70-90 DEG C; taking out the sample after the growth is finished, cleaning with deionized water, and airing. The ZnO microrod preparedby the method grows on the m