HIGH-TEMPERATURE SEMICONDUCTOR BARRIER REGIONS

• Main Authors: SUKIASYAN ARSEN, LIU TING, SUAREZ FERRAN, MAROS AYMERIC
• Format: Patent
• Language: Chinese; English
• Published: 22.12.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Semiconductor devices having a high-temperature barrier layer between a III-V material and an underlying substrate are disclosed. The high-temperature barrier layer can minimize or prevent diffusion of arsenic and phosphorous from an overlying layer into the underlying substrate. Dilute nitride-containing multijunction photovoltaic cells incorporating a high-temperature barrier layer exhibit highefficiency. 公开了半导体器件，该半导体器件在III-V材料与下方基板之间具有高温势垒层的。高温势垒层可以最小化或防止砷和磷从覆盖层向下方基板中的扩散。结合了高温势垒层的含稀氮化物的多结光伏电池表现出高效率。